Position: Home  > All Categories> Integrated Circuits (ICs) > STB200NF03-1

STB200NF03-1

Features: ` TYPICAL RDS(on) = 0.0032` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· DC-DC & DC-AC CONVERTERS· SOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V ...

product image

STB200NF03-1 Picture
See larger image
SeekIC No. : 004507122 Detail

STB200NF03-1: Features: ` TYPICAL RDS(on) = 0.0032` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· DC-DC & DC-AC CONVERTERS· SOLENOID AND RELAY DRIVERSSpecific...

STB200NF03-1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB200NF03-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.0032
`  STANDARD THRESHOLD DRIVE
`  100% AVALANCHE TESTED


Application

·  HIGH CURRENT, HIGH SWITCHING SPEED
·  DC-DC & DC-AC CONVERTERS
·  SOLENOID AND RELAY DRIVERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
30
V
VDGR Drain-gate Voltage (RGS = 20 k)
30
V
VGS Gate- source Voltage
±20
V
ID(**) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM() Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
300
W
  Derating Factor
2.0
W/
dv/dt (1) Peak Diode Recovery voltage slope
1.5
V/ns
EAS(2) Single Pulse Avalanche Energy
1.45
J
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(**) Current Limited by Package
(1) ISD120A, di/dt400A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID = 60 A, VDD = 25 V


Description

This Power MOSFET STB200NF03-1 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Optical Inspection Equipment
AA924
A21K4B
Memory Cards, Modules
WT32
VTL5C7
Tools
TCP202
G084SN05 V.3
Isolators
HCPL062N
HCPL316J
View more