Transistors RF Bipolar Small Signal NPN High Frequency
START420TR: Transistors RF Bipolar Small Signal NPN High Frequency
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 4.5 V | Emitter- Base Voltage VEBO : | 1.5 V |
Continuous Collector Current : | 40 mA | Power Dissipation : | 180 mW |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-323-4 |
Packaging : | Reel |
The START420TR is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches performance level only achieved with GaAs products before.
The features of START420TR are: (1)low noise figure: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V; (2)compression P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V; (3)ultra miniature SOT343 package.
The following is about the maximum ratings of START420TR: (1)Collector-Emitter voltage: 4.5 V ; (2)Collector-Base Voltage: 15 V ; (3)Emitter-Base Voltage: 1.5 V ; (4)Collector Current: 40 mA ; (5)Base current: 4 mA ; (6)Total dissipation, Ts = 101: 180 mW ; (7)Storage temperature: -65 to 150 ; (8)Max. operating junction temperature: 150 ; (9)Thermal Resistance Junction soldering point: 270 /W.