Features: • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V• COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V• TRANSITION FREQUENCY 42GHz• LOW CURRENT CONSUMPTION• ULTRA MINIATURE SOT343 PACKAGEApplication• LNA FOR GSM/DCS, DECT, PCS, PCN, CDMA, W-CDMA• GENERAL...
START405: Features: • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V• COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V• TRANSITION FREQUENCY 42GHz• LOW CURRENT CONSUMPTION• ULTRA MIN...
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Symbol |
Characteristic |
Ratings |
Unit |
Vceo | Collector-Emitter voltage |
4.5 |
V |
Vcbo | Collector-Base Voltage |
15 |
V |
Vebo | Emitter-Base Voltage |
1.5 |
V |
Ic | Collector Current |
10 |
mA |
Ib | Base current |
1 |
mA |
Ptot | Total dissipation, Ts = TBD |
45 |
mW |
Tstg | Storage temperature | -65 to 150 | |
Tj | Max. operating junction temperature |
150 |
|
Rthjs | Thermal Resistance Junction soldering point |
270 |
/W |
The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).
It offers performance level of the START405 only archived with GaAs products before.