Transistors Bipolar (BJT) NPN High Frequency
START405TR: Transistors Bipolar (BJT) NPN High Frequency
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 4.5 V |
Emitter- Base Voltage VEBO : | 1.5 V | Maximum DC Collector Current : | 0.01 A |
DC Collector/Base Gain hfe Min : | 160 | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-323-4 |
Packaging : | Reel |
The START405TR is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performance level only archived with GaAs products before.
The features of START405TR are: (1)low noise figure: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V; (2)compression P1dB = 5dBm @ 1.8GHz, 5mA, 2V; (3)transition frequency 42GHz; (4)low current consumption; (5)ultra miniature SOT343 package.
The following is about the maximum ratings of START405TR: (1)Collector-Emitter voltage: 4.5 V ; (2)Collector-Base Voltage: 15 V ; (3)Emitter-Base Voltage: 1.5 V ; (4)Collector Current: 10 mA ; (5)Base current: 1 mA ; (6)Total dissipation, Ts = TBD: 45 mW ; (7)Storage temperature: -65 to 150 ; (8)Max. operating junction temperature: 150 ; (9)Thermal Resistance Junction soldering point: 270 /W.
Technical/Catalog Information | START405TR |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
Current - Collector (Ic) (Max) | 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 4V |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 4.5V |
Gain | 17.4dB |
Power - Max | 45mW |
Compression Point (P1dB) | 5dBm |
Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | START405TR START405TR |