Features: • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V• COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V• ULTRA MINIATURE SOT343 PACKAGEApplication• LNA FOR GSM/DCS, DECT, PDC, PCS, PCN• PREDRIVER FOR DECT• GENERAL PURPOSE 500MHz-5GHzPinoutSpecifications ...
START420: Features: • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V• COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V• ULTRA MINIATURE SOT343 PACKAGEApplication• LNA FOR GSM/DCS, DEC...
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Symbol |
Characteristic |
Ratings |
Unit |
Vceo | Collector-Emitter voltage |
4.5 |
V |
Vcbo | Collector-Base Voltage |
15 |
V |
Vebo | Emitter-Base Voltage |
1.5 |
V |
Ic | Collector Current |
40 |
mA |
Ib | Base current |
4 |
mA |
Ptot | Total dissipation, Ts = 101 |
180 |
mW |
Tstg | Storage temperature | -65 to 150 | |
Tj | Max. operating junction temperature |
150 |
|
Rthjs | Thermal Resistance Junction soldering point |
270 |
/W |
The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo).
It reaches performance level only achieved with GaAs products before.