ST13005

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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ST13005 Picture
SeekIC No. : 00204250 Detail

ST13005: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

US $ .3~.45 / Piece | Get Latest Price
Part Number:
ST13005
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.45
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  • $.33
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 4 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Collector- Emitter Voltage VCEO Max : 400 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 15
Package / Case : TO-220
Emitter- Base Voltage VEBO : 9 V


Features:

` MEDIUM VOLTAGE CAPABILITY
` NPN TRANSISTORS
` LOW SPREAD OF DYNAMIC PARAMETERS
` MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
` VERY HIGH SWITCHING SPEED
` THROUGH-HOLE I2PAK (TO-262) POWER PACKAGEIN TUBE (SUFFIX "-1")




Application

·ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
·SWITCH MODE POWER SUPPLIES



Specifications

Symbol Parameter
Value
Unit
VCES Collector-Emit ter Voltage (VBE = 0)
700
V
VCEO Collector-Emit ter Voltage (IB = 0)
400
V
VEBO Emitter-Base Voltage (IC = 0)
9
V
IC Collector Current
4
A
ICM Collector Peak Current (tp < 5 ms)
8
A
IB Base Current
2
A
IBM Base Peak Current (tp < 5 ms)
4
A
Ptot Total Dissipation at Tc = 25
75
W
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150



Description

The ST13005 are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.




Parameters:

Technical/Catalog InformationST13005
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)4A
Power - Max75W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 2A, 5V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names ST13005
ST13005
497 3149 5 ND
49731495ND
497-3149-5



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