ST13003

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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ST13003 Picture
SeekIC No. : 00210937 Detail

ST13003: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

Part Number:
ST13003
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 1.5 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-32 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 400 V
DC Collector/Base Gain hfe Min : 8
Packaging : Tube
Maximum DC Collector Current : 1.5 A
Emitter- Base Voltage VEBO : 9 V
Package / Case : SOT-32


Features:

· MEDIUM VOLTAGECAPABILITY
· LOW SPREAD OF DYNAMIC PARAMETERS
· MINIMUM LOT-TO-LOT SPREAD FOR RELIABLEOPERATION
· VERY HIGH SWITCHING SPEED



Application

·ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
·SWITCH MODE POWER SUPPLIES



Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 700 V
VCEO Collector-Emitter Voltage (IB = 0) 400 V
VEBO Emitter-Base Voltage
(IC = 0, IB = 0.75 A, tp < 10s, Tj < 150)
BVEBO V
IC Collector Current 1.5 A
ICM Collector Peak Current (tp < 5 ms) 3 A
IB Base Current 0.75 A
IBM Base Peak Current (tp < 5 ms) 1.5 A
Ptot Total Dissipation at Tc = 25 40 W
Tstg Storage Temperature -65 to 150



Description

The ST13003 is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The ST13003 is designed for use in lighting applications and low cost switch-mode power supplies.




Parameters:

Technical/Catalog InformationST13003
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)400V
Current - Collector (Ic) (Max)1.5A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 500mA
Frequency - Transition-
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseSOT-32-3, TO-126-3
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names ST13003
ST13003



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