Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±8 V ID@TA=25 Continuous Drain Current3 8.2 A ID@TA=70 Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25 Total Power Dissipation 2 ...
SSM4226M: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±8 V ID@TA=25 Continuous Drain Current3 8.2 A ID@TA=70 Continuous D...
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Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-Source Voltage | ±8 | V |
ID@TA=25 | Continuous Drain Current3 | 8.2 | A |
ID@TA=70 | Continuous Drain Current3 | 6.7 | A |
IDM | Pulsed Drain Current1 | 30 | A |
PD@TA=25 | Total Power Dissipation | 2 | W |
Linear Derating Factor | 0.016 | W/ | |
TSTG | Storage Temperature Range | -55 to 150 | |
TJ | Operating Junction Temperature Range | -55 to 150 |
SSM4226M Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.