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SSM40N03P

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 40 A ID@TC=100 Continuous Drain Current, VGS @ 10V 30 A IDM Pulsed Drain Current1 169 A PD@TC=25 Total Po...

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SeekIC No. : 004503964 Detail

SSM40N03P: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 40 A ID@TC=100 Co...

SSM40N03P Data Sheet

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Part Number:
SSM40N03P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ± 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 40 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 30 A
IDM Pulsed Drain Current1 169 A
PD@TC=25 Total Power Dissipation 50 W
  Linear Derating Factor 0.4 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

SSM40N03P Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial and industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.




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