SSH4N70

Features of the SSH4N70 are:(1)low RDS(ON);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysillcon gate cell structure;(5)low input capacitance;(6)extended safe operating area;(7):improved high temperature reliability.

The absolute maximum ratings of the SSH4N70 can be summarized as:(1):the parameter is drain-to-source voltage,the symbol is VDSS,the rating is 700,the unit is V;(2):the parameter is continuous drain current (TC=25),the symbol is ID,the rating is 4.0,the unit is A;(3):the parameter is continuous drain current (TC=100),the symbol is ID,the rating is 2.8,the unit is A;(4):the parameter is drain current-pulsed,the symbol is IDM,the rating is 16.0,the unit is A;(5):the parameter is gate-to-source voltage,the symbol is VGS,the rating is ±30,the unit is V;(6):the parameter is single pulsed avalanche energy,the symbol is EAS,the rating is 280,the unit is mJ;(7):the parameter is avalanche current,the symbol is IAS,the rating is 4.0,the unit is A;(8):the parameter is drain-gate voltage,the symbol is VDGR,the rating is 700,the unit is V;(9):the parameter is total power dissipation TC=25,the symbol is PD,the rating is 135,the unit is W;(10):the parameter is total power dissipation derate above 25,the symbol is PD,the rating is 1.08,the unit is W/;(11):the parameter is operating junction and storage temperature range,the symbol is TJ,TSTG,the rating is -55 to +150,the unit is ;(12):the parameter is maximum lead temperature for soldering purposes,1/8" from case for 5-seconds,the symbol is TL,the rating is 300,the unit is .

The thermal resistance of the SSH4N70 can be summarized as:(1):the parameter is junction-to-case,the symbol is RJC,the rating is 0.93,the unit is k/W;(2):the parameter is case-to-sink,the symbol is RCS,the rating is 0.24,the unit is k/W;(3):the parameter is junction-to-ambient,the symbol is RJA,the rating is 40,the unit is k/W.