Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS(ON) : 0.054 (Typ.)Specifications Symbol Characteristic Value Units VDSS Dra...
SSH45N20A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS...
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Symbol |
Characteristic |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
200 |
V |
ID
|
Continuous Drain Current (TC=25 ) |
45 |
A |
Continuous Drain Current (TC=100 ) |
27.8 | ||
IDM |
Drain Current-Pulsed |
180 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V |
EAS |
Single Pulsed Avalanche Energy |
675 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
27.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
278 2.22 |
W W/ |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |