SRM201610

The SRM201610 is designed as a 2048 words x 8 bits asynchronous, static random access memory on a monolithic CMOS chip. Its very low standby power requirement makes SRM201610 ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing circuit. Both the input and output ports are TTL compatible and the three-state output allows easy expansion of memory capacity.

SRM201610 has many features. The first one is its access time would be 100ns max. The second one is low supply current which would be 1uA for standby and 30mA for operation. The third one is completely static operation. The fourth one is single power supply 5V ± 10%. The fifth one is TTL compatible inputs and outputs. The sixth one is 3-state output with wired-OR capability. The seventh one is non-volatile storage with back-up batteries. That are all the main features.

Some absolute maximum ratings of SRM201610 have been concluded into several points as follow. The first one is about its supply voltage which would be from -0.5V to 7.0V. The second one is about its input voltage which would be from -0.5V to 7.0V. The third one is about its input / output voltage which would be from -0.5V to Vdd+0.3V. The fourth one is about its power dissipation which would be 1.0W. The fifth one is about its operating temperature range which would be from 0°C to 70°C. The sixth one is about its storage temperature range which would be from -65°C to 150°C. The seventh one is about its soldering temperature & time which would be 260°C, 10s (at lead). The eighth one is about its output voltage which would be max 0.4V for low level and would be min 2.4V for high level. And so on. For more information of SRM201610, please contact us.