Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 190 Watts 0.85/W 200 -65 to 150 1.7.58 A 125V 1...
SQ742: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
190 Watts |
0.85/W |
200 |
-65 to 150 |
1.7.58 A |
125V |
125V |
20V |
SQ742 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.
SQ742 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.