SQ741

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110 Watts 1.40/W 200 -65 to 150 4.5 A 125V 125V...

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SQ741 Picture
SeekIC No. : 004501616 Detail

SQ741: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

floor Price/Ceiling Price

Part Number:
SQ741
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/19

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
110 Watts
1.40/W
200
-65 to 150
4.5 A
125V
125V
20V





Description

Silicon VDMOS and LDMOS transistors SQ741 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others. 

SQ741  features low feedback and output capacitances resulting in high F transistors with high ainput impedance and high efficiency.






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