SQ701 Selling Leads, Price trend, SQ701 DataSheet download, circuit diagram from SeekIC.com

Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110 Watts 1.40/W 200 -65 to 150 6.5 A 70V 70V ...

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SeekIC No. : 004501614 Detail

SQ701: Specifications Total DeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolt...

SQ701 Data Sheet

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Part Number:: SQ701
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/19

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SQ7002K-T1-GE3 evaluate
US $.14 - .14 / Piece

MOSFET N-CH 60V 320MA SOT23-3

Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
110 Watts	1.40/W	200	-65 to 150	6.5 A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors, SQ701 designed specifically for broadband RF applications. Suitable for Militry Radios,
Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others, SQ701.

"Polyfet"^TMprocess SQ701 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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SQ701

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