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SQ7002K-T1-GE3

MOSFET N-CH 60V 320MA SOT23-3

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SeekIC No. : 003434028 Detail

SQ7002K-T1-GE3: MOSFET N-CH 60V 320MA SOT23-3

SQ7002K-T1-GE3 Data Sheet

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US $ .14~.14 / Piece | Get Latest Price
Part Number:
SQ7002K-T1-GE3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.14
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 320mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) @ Vgs: 1.4nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 24pF @ 30V
Power - Max: 500mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Series: TrenchFET®
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 500mW
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 320mA
Gate Charge (Qg) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 24pF @ 30V


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