MOSFET
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Features: • New revolutionary high voltage technology• Ultra low gate charge• Pe...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 17 A | ||
Resistance Drain-Source RDS (on) : | 0.29 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Technical/Catalog Information | SPW17N80C3A |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 17A |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 2320pF @ 25V |
Power - Max | 208W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 177nC @ 10V |
Package / Case | TO-247 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPW17N80C3A SPW17N80C3A |