SPU30N03S2L-10

MOSFET N-CH 30V 30A TO-251

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SPU30N03S2L-10: MOSFET N-CH 30V 30A TO-251

floor Price/Ceiling Price

Part Number:
SPU30N03S2L-10
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) @ Vgs: 39.4nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1460pF @ 25V
Power - Max: 82W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: P-TO251-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 82W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Input Capacitance (Ciss) @ Vds: 1460pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: P-TO251-3
Gate Charge (Qg) @ Vgs: 39.4nC @ 10V


Features:

 N-Channel
Logic Level
Low on-resistance RDS(on)
Excellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
75°C operating temperature
 Avalanche rated
dv/dt rated
Ideal for fast switching applications




Specifications

Parameter

Symbol

Value

Unit

Continuous drain current
TC=25°C,1)

TC=100°C
ID
30
30
A
Pulsed drain current
TC=25°C
ID puls
120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25
EAS
150
mJ
Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
82
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56



Parameters:

Technical/Catalog InformationSPU30N03S2L-10
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs10 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 1460pF @ 25V
Power - Max82W
PackagingTube
Gate Charge (Qg) @ Vgs39.4nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU30N03S2L 10
SPU30N03S2L10
SPU30N03S2L 10IN ND
SPU30N03S2L10INND
SPU30N03S2L-10IN



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