SPU30N03S2-08

MOSFET N-CH 30V 30A IPAK

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SeekIC No. : 003430605 Detail

SPU30N03S2-08: MOSFET N-CH 30V 30A IPAK

floor Price/Ceiling Price

Part Number:
SPU30N03S2-08
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 30A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) @ Vgs: 47nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2170pF @ 25V
Power - Max: 125W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: P-TO251-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 47nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 125W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Input Capacitance (Ciss) @ Vds: 2170pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 4V @ 85µA
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
Supplier Device Package: P-TO251-3


Features:

• N-Channel
• Enhancement mode
• Low On-Resistance RDS(on)
• Excellent Gate Charge x RDS(on) product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated




Specifications

Parameter
Symbol
Value
Unit
Continuous drain current1)
TC=25°C1)
ID
30
30
A
Pulsed drain current
TC=25°C
ID puls
120
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
EAS
250
mJ
Repetitive avalanche energy, limited by Tjmax2)
EAR
12
Reverse diode dv/dt
I
S=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
dv/dt
6
V/ns
Gate source voltage
VGS
±20
V
Power dissipation
TC=25°C
Ptot
125
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1  

 55/175/56

 



Parameters:

Technical/Catalog InformationSPU30N03S2-08
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs8.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2170pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs47nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU30N03S2 08
SPU30N03S208



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