SPP47N10L

MOSFET N-CH 100V 47A TO-220

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SeekIC No. : 003431499 Detail

SPP47N10L: MOSFET N-CH 100V 47A TO-220

floor Price/Ceiling Price

Part Number:
SPP47N10L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/31

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 47A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) @ Vgs: 135nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2500pF @ 25V
Power - Max: 175W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: P-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 47A
Gate Charge (Qg) @ Vgs: 135nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) @ Vds: 2500pF @ 25V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 2V @ 2mA
Power - Max: 175W
Supplier Device Package: P-TO220-3


Features:

· N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID 47
33
A
Pulsed drain current
TC = 25 °C
ID puls 188
Avalanche energy, single pulse
ID =47A, VDD = 25 V, RGS = 25
EAS 400 mJ
Avalanche energy, periodic limited by Tjmax EAR 17.5
Reverse diode dv/dt
IS = 47A, VDS = 0 V, di/dt = 200 A/s
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 175 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56



Parameters:

Technical/Catalog InformationSPP47N10L
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C47A
Rds On (Max) @ Id, Vgs26 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max175W
PackagingTube
Gate Charge (Qg) @ Vgs135nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPP47N10L
SPP47N10L



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