SPP42N03S2L13

MOSFET N-CH 30V 42A TO-220AB

product image

SPP42N03S2L13 Picture
SeekIC No. : 003431497 Detail

SPP42N03S2L13: MOSFET N-CH 30V 42A TO-220AB

floor Price/Ceiling Price

Part Number:
SPP42N03S2L13
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/7

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 42A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 37µA Gate Charge (Qg) @ Vgs: 30.5nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1130pF @ 25V
Power - Max: 83W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: P-TO220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 83W
Current - Continuous Drain (Id) @ 25° C: 42A
Gate Charge (Qg) @ Vgs: 30.5nC @ 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 37µA
Input Capacitance (Ciss) @ Vds: 1130pF @ 25V
Supplier Device Package: P-TO220AB
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 21A, 10V


Parameters:

Technical/Catalog InformationSPP42N03S2L13
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs12.9 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 1130pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs30.5nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP42N03S2L13
SPP42N03S2L13
SPP42N03S2L 13TIN ND
SPP42N03S2L13TINND
SPP42N03S2L-13TIN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Connectors, Interconnects
Inductors, Coils, Chokes
Power Supplies - External/Internal (Off-Board)
View more