SPP10N10L

MOSFET N-CH 100V 10.3A TO-220

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SeekIC No. : 003433050 Detail

SPP10N10L: MOSFET N-CH 100V 10.3A TO-220

floor Price/Ceiling Price

Part Number:
SPP10N10L
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Series: SIPMOS® Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 10.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 21µA Gate Charge (Qg) @ Vgs: 22nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 444pF @ 25V
Power - Max: 50W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 10.3A
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO220-3
Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Input Capacitance (Ciss) @ Vds: 444pF @ 25V


Parameters:

Technical/Catalog InformationSPP10N10L
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10.3A
Rds On (Max) @ Id, Vgs154 mOhm @ 8.1A, 10V
Input Capacitance (Ciss) @ Vds 444pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP10N10L
SPP10N10L



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