MOSFET N-CH 100V 10.3A TO-220
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Series: | SIPMOS® | Manufacturer: | Infineon Technologies | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 100V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 10.3A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 154 mOhm @ 8.1A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 21µA | Gate Charge (Qg) @ Vgs: | 22nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 444pF @ 25V | ||
Power - Max: | 50W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | PG-TO220-3 |
Technical/Catalog Information | SPP10N10L |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 10.3A |
Rds On (Max) @ Id, Vgs | 154 mOhm @ 8.1A, 10V |
Input Capacitance (Ciss) @ Vds | 444pF @ 25V |
Power - Max | 50W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 22nC @ 10V |
Package / Case | TO-220 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPP10N10L SPP10N10L |