FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 300W
Gate Charge (Qg) @ Vgs: 220nC @ 10V
Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Input Capacitance (Ciss) @ Vds: 8180pF @ 25V
Supplier Device Package: P-TO220AB
Features: · N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
Specifications
| Parameter |
Symbol |
Value |
Unit |
Continuous drain current1)
TC = 25 °C
|
ID |
100
100 |
A |
Pulsed drain current
TC = 25 °C |
ID puls |
400 |
Avalanche energy, single pulse
ID =80A, VDD = 25 V, RGS = 25 |
EAS |
810 |
mJ |
| Repetitive avalanche energy, limited by Tjmax 2) |
EAR |
30 |
Reverse diode dv/dt
IS =100 A, VDS = 24 , di/dt = 200 A/s,
Tjmax = 175 °C
|
dv/dt |
6 |
kV/s |
| Gate source voltage |
VGS |
±20 |
V |
Power dissipation
TC = 25 °C |
Ptot |
300 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +175 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
55/175/56 |
|
1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 245A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test
Parameters: | Technical/Catalog Information | SPP100N03S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 8180pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 220nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP100N03S2L 03
SPP100N03S2L03
SPP100N03S2L 03IN ND
SPP100N03S2L03INND
SPP100N03S2L-03IN
|
SPP100N03S2L-03 Data Sheet
