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SKM50GB063D

Features: • N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)• Low tail current with low temperature dependence• High short circuit capability, self limiting if term. G is clamped to E• Pos. temp.-coeff. of VCEsat• 50 % less turn off losses 9)̶...

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SKM50GB063D: Features: • N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)• Low tail current with low temperature dependence• High short circuit capability, self limiting if...

SKM50GB063D Data Sheet

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Part Number:
SKM50GB063D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT)
• Low tail current with low temperature dependence
• High short circuit capability, self limiting if term. G is clamped to E
• Pos. temp.-coeff. of VCEsat
• 50 % less turn off losses 9)
• 30 % less short circuit current 9)
• Very low Cies, Coes, Cres 9)
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding echnology without hard mould
• Large clearance (10 mm) and reepage distances (20 mm)


Application

• Switching (not for linear use)
• Switched mode power supplies
• UPS
• Three phase inverters for servo / AC motor speed control
• Pulse frequencies also above 10 kHz


Specifications

Symbol
Conditions 1)
Values
Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kW
Tcase = 25/75 °C
Tcase = 25/75 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
600
600
70 / 50
140 / 100
± 20
250
40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
IF = IC
IFM = ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
75 / 50
140 / 100
440
970
A
A
A
A2s



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