SKM500GA123D

The SKM500GA123D is designed as one kind of Trench IGBT module, SKM500GA123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (12 mm) and creepage distances (20 mm).

Also SKM500GA123D can be used in wide range of applications such as (1)AC inverter drives on mains 575-750 VAC;(2)DC bus voltage 750 - 1200 VDC;(3)public transport;(4)switching (not for linear use). The absolute maximum ratings of the SKM500GA123D can be summarized as:(1)V CES: 1200 V;(2)Ic: 500 (420) A;(3)I CRM: 800 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)I F: 500 (350) A;(8)I FRM: 800 A;(9)I FSM: 3600.

The electrical characteristics of SKM500GA123D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.4 to 1.6 V;(4)rCE: 2.75 to 3.5 m;(5)VCE(sat): 2.5 to 3.0 V;(6)Cies: 26 to 40 nF;(7)Coes: 4 to 5.2 nF;(8)Cres: 2 to 2.6 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.18 m. If you want to know more information such as the electrical characteristics about the SKM500GA123D, please download the datasheet in www.seekic.com or www.chinaicmart.com.