Features: 100V Trench MOSFET technology on AlNDCB substrate Integrated DC-link electrolytic capacitors Pressure contact technology for improvedpower cycling performance Optimal thermal management with integrated liquid-cooled heatsink Two integrated current sensors with option to include three In...
SKAI6001MD101452W: Features: 100V Trench MOSFET technology on AlNDCB substrate Integrated DC-link electrolytic capacitors Pressure contact technology for improvedpower cycling performance Optimal thermal management w...
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Symbol Irms |
Conditions no overload, Tcoolant = 70, 10kHz, p.f.=0,8 overload, t<20s |
Values 500 600 |
Units A A |
V(BR)DSS R DS(ON) EON + EOFF |
MOSFET driver without supply; min V GS= 10V, Tj = 25 VGS = 10V, Tj= 125 V CC= 50V, ID = 300A, T= 125 |
100 1,14 1,9 6 |
V m m mJ |
EON + EOFF |
Inverse diode IF = 400A, Tj= 25 IF = 400A, Tj= 125 VCC=50V,IF = 300A, Tj= 125 |
0,98 0,9 1,35 |
V V mJ |
Rthjr Rthja PaDR |
Thermal Characteristics / Heatsink per MOSFET switch Heatsink to coolant , flow rate Vj= 15 l/min Heatsink to coolant , flow rate Vi= 5 l/min Pressure drop, Coolant flow rate Vi= 5 l/min |
0,085 0,014 0,020 0,08 0.61 |
K/W K/W K/W bar bar |
Ceqvl V DCmax |
Capacitor bank total equivalent capacitance max. DC voltage applied to capacitor bank |
19,8 80 |
mF V |
VS IS fswmax |
Driver Power supply: min Power supply: max Supply current Max. Switching Frequency |
18 30 500 20 |
V V mA kHz |
Visol | power terminals to heatsink: AC, 1 min. | 1000 | V |
Tvj T stg Tamb |
Junction temperature (not including driver) Storage Temperature Operating ambient temperature |
-40...+175 -40...+125 -40...+85 |
|
ITRIPSC TTRIP UDCTRIP |
Protection Short Circuit Protection Over-Temp. Protection VCC Overvoltage Protection |
|
A V |
L x W x H W |
Dimensions Length x Width x Height approx. |
315 x 115 x95 3 |
mm kg |