Features: 1200V Trench IGBT technology on AlN DCB substrateIntegrated DC-link film capacitorPressure contact technology for improved power cycling performance Optimal thermal management with improved power cycling performanceOptimal thermal management with integrated liquid-cooled heatsinkTwo inte...
SKAI3001GD121452W: Features: 1200V Trench IGBT technology on AlN DCB substrateIntegrated DC-link film capacitorPressure contact technology for improved power cycling performance Optimal thermal management with improve...
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Symbol Irms VCES |
Conditions no overload, Tcoolant = 50, 10kHz, p.f.=0,8 overload, t<20s |
Values 400 500 1200 |
Units A A V |
V CEO rCE VCEsat EON + EOFF |
IGBT Tj = 125 Tj= 125 400A,Tj= 25/125 VCC = 300/400V, IC = 400A,Tj= 125 |
0,85 3,1 1,76/2,2 101/151 |
V m V mJ |
|
Inverse diode Tj = 125 Tj= 125 400A,Tj= 25/125 VCC = 300/400V, IC = 400A,Tj= 125 |
0,80 1,87 1,56/1,55 32/38 |
V m V mJ |
Rthjs Rthjs Rthja PaDR |
Thermal Characteristics / Heatsink per IGBT per diode Heatsink to coolant , flow rate Vj= 15 l/min Heatsink to coolant , flow rate Vi= 5 l/min Pressure drop, Coolant flow rate Vi= 5 l/min Pressure drop, Coolant flow rate Vi= 15 l/min |
0,065 0,13 9,3 13,4 0,05 0.55 |
K/W K/W K/kW K/kW bar bar |
Ceqvl V DCmax |
Capacitor bank total equivalent capacitance max. DC voltage applied to capacitor bank |
1 900 |
mF V |
VS IS dV/dt fswmax |
Driver Power supply:typ value Power supply: min / max values Supply current Primary to Secondary Side Max. Switching Frequency |
24 8/30 500 15 15 |
V V mA kV/|ì kHz |
Visol | power terminals to heatsink: AC, 1 min. | 3000 | V |
Tvj T stg Tamb |
Junction temperature (not including driver) Storage Temperature Operating ambient temperature |
-40...+150 -40...+125 -40...+85 |
|
ITRIPSC TTRIP UDCTRIP |
Protection Short Circuit Protection Over-Temp. Protection VCC Overvoltage Protection |
|
A V |
L x W x H W |
Dimensions Length x Width x Height approx. |
400 x 215 x100 8,2 |
mm kg |