Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 190 Watts 0.85 / w 200 -65 to +150 11.5A 70V 70V 20VDescriptionSilicon VDMOS an...
SK702: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
190 Watts | 0.85 / w | 200 | -65 to +150 | 11.5A | 70V | 70V | 20V |
Silicon VDMOS and LDMOS transistors SK702 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™process SK702 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.