Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110 Watts 1.40 / w 200 -65 to +150 6.5A 70V 70V 20VDescriptionSilicon VDMOS and...
SK701: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
110 Watts | 1.40 / w | 200 | -65 to +150 | 6.5A | 70V | 70V | 20V |
Silicon VDMOS and LDMOS transistors SK701 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process SK701 features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.