MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
SI7901EDN-T1-GE3: MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V
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Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 4.3 A | ||
Resistance Drain-Source RDS (on) : | 48 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK 1212-8 | Packaging : | Reel |