SI7336ADP-T1-E3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 30 A
Package / Case : PowerPAK SO-8
Resistance Drain-Source RDS (on) : 3 mOhms


Description

The SI7336ADP-T1-E3 is one member of the SI7336ADP family which has lower on-resistance, otherwise, both part numbers perform identically.

The absolute maximum ratings of the SI7336ADP-T1-E3 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150) TA = 25: 18 A;(4)Continuous Drain Current (TJ = 150) TA = 70: 15 A;(5)Pulsed Drain Current: 70 A;(6)Continuous Source Current (Diode Conduction): 1.8 A;(7)Maximum Power Dissipation: 1.2 to 1.9 W;(8)Operating Junction and Storage Temperature Range:-55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Gate Threshold Voltage: 1.0 to 3.0 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: 1 uA;(4)On-State Drain Current: 30 A;(5)Drain-Source On-State Resistance: 0.0020 to 0.0030 ;(6)Forward Transconductance: 110 s;(7)Diode Forward Voltage: 0.72 to 1.1 V. If you want to know more information such as the electrical characteristics about the SI7336ADP-T1-E3, please download the datasheet in www.seekic.com or www.chinaicmart.com.