SI7302DN-T1-E3

MOSFET N-CH 220V PWRPAK 1212-8

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SeekIC No. : 003430788 Detail

SI7302DN-T1-E3: MOSFET N-CH 220V PWRPAK 1212-8

floor Price/Ceiling Price

US $ .76~.76 / Piece | Get Latest Price
Part Number:
SI7302DN-T1-E3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.76
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 220V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 21nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 645pF @ 15V
Power - Max: 52W Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Supplier Device Package: PowerPAK? 1212-8    

Description

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Series: TrenchFET®
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK? 1212-8
Supplier Device Package: PowerPAK? 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power - Max: 52W
Current - Continuous Drain (Id) @ 25° C: 8.4A
Drain to Source Voltage (Vdss): 220V
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds: 645pF @ 15V


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