MOSFET 60V 8.0A 19.8W 115mohm @ 10V
SI7309DN-T1-E3: MOSFET 60V 8.0A 19.8W 115mohm @ 10V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.9 A | ||
Resistance Drain-Source RDS (on) : | 115 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK 1212-8 | Packaging : | Reel |