SI5902BDC-T1-GE3, US $ .33-.36 , Vishay/Siliconix, SI5902BDC-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00155755 Detail

SI5902BDC-T1-GE3: MOSFET 30V 4.0A 3.12W

SI5902BDC-T1-GE3 Data Sheet

US $ .33~.36 / Piece | Get Latest Price

Part Number:: SI5902BDC-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Qty
0~1880
1880~3000
3000~6000
6000~12000

Unit Price
$.36
$.35
$.34
$.33

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/12

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Si5902BDC evaluate
DescriptionDual N-Channel 30-V (D-S) MOSFET Si5902BDC
SI5902BDC-T1-E3 evaluate
US $.33 - .36 / Piece

MOSFET 30V 4.0A 3.12W
Si5902DC evaluate
PinoutSpecifications Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	3.7 A
Resistance Drain-Source RDS (on) :	65 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	1206-8 ChipFET	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 65 mOhms
Continuous Drain Current : 3.7 A
Package / Case : 1206-8 ChipFET

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SI5902BDC-T1-GE3

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