SI5402DC-T1-GE3, US $ .3-.4 , Vishay/Siliconix, SI5402DC-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157303 Detail

SI5402DC-T1-GE3: MOSFET 30V 6.7A 2.5W 35mohm @ 10V

SI5402DC-T1-GE3 Data Sheet

US $ .3~.4 / Piece | Get Latest Price

Part Number:: SI5402DC-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1820~3000
3000~6000
6000~12000

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$.4
$.32
$.31
$.3

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15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/16

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Recent History
What is this?

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SI5401DC-T1-E3 evaluate
MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V
SI5401DC-T1-GE3 evaluate
MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	6.7 A
Resistance Drain-Source RDS (on) :	35 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	1206-8 ChipFET	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : 6.7 A
Package / Case : 1206-8 ChipFET

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SI5402DC-T1-GE3

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