SI5402DC-T1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 35 mOhms
Continuous Drain Current : 6.7 A
Package / Case : 1206-8 ChipFET


Pinout




Description

The SI5402DC-T1 is one member of the SI5433DC family which is designed as the N-Channel 30-V (D-S) MOSFET that has two points of features:(1)TrenchFET Power MOSFET; (2)100% Rg tested.

The absolute maximum ratings of the SI5402DC-T1 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current (TJ = 150) TA = 25: +/-6.7 to +/-4.9 A;(4)Continuous Drain Current (TJ = 150) TA = 85: +/-4.8 to +/-3.5 A;(5)Pulsed Drain Current: +/- 20 A;(6)Continuous Source Current (Diode Conduction): 2.1 to 1.1 A;(7)Maximum Power Dissipation: 0.7 to 2.5 W;(8)Operating Junction and Storage Temperature Range:-55 to +150 .

The electrical characteristics of this SI5402DC-T1 can be summarized as:(1)Gate Threshold Voltage: -0.45 V;(2)Gate-Body Leakage: +/- 100 nA;(3)Zero Gate Voltage Drain Current: -1 uA or -5 uA;(4)On-State Drain Current: -20 A;(5)Drain-Source On-State Resistance: 0.036 to 0.040 ;(6)Forward Transcon-ductance: 15 s;(7)Diode Forward Voltage: -0.8 to -1.2 V. If you want to know more information such as the electrical characteristics about the SI5402DC-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com.