SI4532DY, US $ .27-.4 , Fairchild Semiconductor, SI4532DY DataSheet download, circuit diagram from SeekIC.com

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SI4532DY: MOSFET 30V Dual N/P FET Enhancement Mode

SI4532DY Data Sheet

US $ .27~.4 / Piece | Get Latest Price

Part Number:: SI4532DY
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/23

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SI4500BDY-T1 evaluate
MOSFET 20V 9.1/5.3A 1.3W
SI4500BDY-T1-E3 evaluate
US $.5 - .71 / Piece

MOSFET 20V 7/4.5A 2.5W
SI4500BDY-T1-GE3 evaluate
US $.29 - .38 / Piece

MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	+/- 30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	3.9 A, - 3.5 A
Resistance Drain-Source RDS (on) :	0.053 Ohms	Configuration :	Dual Dual Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.9 A, - 3.5 A
Resistance Drain-Source RDS (on) : 0.053 Ohms

Parameters:

Technical/Catalog Information	SI4532DY
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.9A, 3.5A
Rds On (Max) @ Id, Vgs	65 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	235pF @ 10V
Power - Max	900mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SO-8
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI4532DY SI4532DY SI4532DYDKR ND SI4532DYDKRND SI4532DYDKR

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SI4532DY

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