MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
SI2319DS-T1-E3: MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.3 A | ||
Resistance Drain-Source RDS (on) : | 0.082 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-236-3 | Packaging : | Reel |