SI2306BDS-T1-GE3, US $ .22-.43 , Vishay/Siliconix, SI2306BDS-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00147934 Detail

SI2306BDS-T1-GE3: MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

SI2306BDS-T1-GE3 Data Sheet

US $ .22~.43 / Piece | Get Latest Price

Part Number:: SI2306BDS-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$.43
$.3
$.25
$.22

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/22

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	3.16 A
Resistance Drain-Source RDS (on) :	0.047 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-236-3	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 0.047 Ohms
Continuous Drain Current : 3.16 A

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SI2306BDS-T1-GE3

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