SI2305ADS-T1-GE3, US $ .16-.36 , Vishay/Siliconix, SI2305ADS-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00147484 Detail

SI2305ADS-T1-GE3: MOSFET 8.0V 4.1A 1.7W 40 mohms @ 4.5V

SI2305ADS-T1-GE3 Data Sheet

US $ .16~.36 / Piece | Get Latest Price

Part Number:: SI2305ADS-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~1
1~10
10~100
100~250

Unit Price
$.36
$.23
$.19
$.16

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/22

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	8 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	4.1 A
Resistance Drain-Source RDS (on) :	0.04 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23-3	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Drain-Source Breakdown Voltage : 8 V
Package / Case : SOT-23-3
Continuous Drain Current : 4.1 A
Resistance Drain-Source RDS (on) : 0.04 Ohms

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SI2305ADS-T1-GE3

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