SI2302DS,215, US $ .06-.14 , NXP Semiconductors, SI2302DS,215 DataSheet download, circuit diagram from SeekIC.com

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SI2302DS,215: MOSFET N-CH TRENCH 20V 2.5A

SI2302DS,215 Data Sheet

US $ .06~.14 / Piece | Get Latest Price

Part Number:: SI2302DS,215
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/11/23

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Recent History
What is this?

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Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
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MOSFET -20V -2.8A

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	2.5 A
Resistance Drain-Source RDS (on) :	56 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-236AB	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 56 mOhms
Continuous Drain Current : 2.5 A
Package / Case : TO-236AB

Parameters:

Technical/Catalog Information	SI2302DS,215
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	85 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds	230pF @ 10V
Power - Max	830mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SST3 (SOT-23-3)
FET Feature	Logic Level Gate
Drawing Number	568; SOT23; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SI2302DS,215 SI2302DS,215

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SI2302DS,215

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