MOSFET N-CH TRENCH 20V 2.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 2.5 A | ||
Resistance Drain-Source RDS (on) : | 56 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-236AB | Packaging : | Reel |
Technical/Catalog Information | SI2302DS,215 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 2.5A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.6A, 4.5V |
Input Capacitance (Ciss) @ Vds | 230pF @ 10V |
Power - Max | 830mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
Package / Case | SST3 (SOT-23-3) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT23; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SI2302DS,215 SI2302DS,215 |