SI2302DS Selling Leads, Price trend, SI2302DS DataSheet download, circuit diagram from SeekIC.com

Features: TrenchMOS™ technologyVery fast switchingLogic level compatibleSubminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC converter.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC...

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SeekIC No. : 004489968 Detail

SI2302DS: Features: TrenchMOS™ technologyVery fast switchingLogic level compatibleSubminiature surface mount package.Application· Battery management· High speed switch· Low power DC to DC converter.Pino...

SI2302DS Data Sheet

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Part Number:: SI2302DS
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/13

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Recent History
What is this?

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Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
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US $.14 - .29 / Piece

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US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Description

Features:

TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.

Application

· Battery management
· High speed switch
· Low power DC to DC converter.

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage (DC)	Tj = 25 to 150 °C	-	20	V
VGS	gate-source voltage (DC)		-	±8	V
ID	drain current (DC)	T_sp = 25 °C; V_GS = 4.5 V; Figure 2 and 3	-	2.5	A
ID	drain current (DC)	T_sp = 70 °C; V_GS = 4.5 V; Figure 2	-	2	A
IDM	peak drain current	T_sp = 25 °C; pulsed; tp £ 10 ms; Figure 3	-	10	A
Ptot	total power dissipation	T_sp = 25 °C; Figure 1	-	0.83	W
Tstg	storage temperature		-65	+150
Tj	operating junction temperature		-65	+150
Source-drain diode
IS	source (diode forward) current (DC) T_sp = 25 °C		-	0.7	A

Description

SI2302DS N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
SI2302DS in SOT23.

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SI2302DS

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