SI2301CDS-T1-GE3, US $ .15-.28 , Vishay/Siliconix, SI2301CDS-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00152306 Detail

SI2301CDS-T1-GE3: MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V

SI2301CDS-T1-GE3 Data Sheet

US $ .15~.28 / Piece | Get Latest Price

Part Number:: SI2301CDS-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

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0~1
1~10
10~100
100~250

Unit Price
$.28
$.18
$.17
$.15

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/12/27

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Recent History
What is this?

SI2300 evaluate
Features: VDS=20V,RDS(ON)=40m@VGS=4.5V,ID=5.0AVDS=20V,RDS(ON)=60m@VGS=2.5V,ID=4.0AVDS=20V,,RDS(ON)...
SI2300DS-T1-GE3 evaluate
US $.14 - .29 / Piece

MOSFET 30V 3.6A N-CH MOSFET
SI2301 evaluate
US $.13 - .16 / Piece

MOSFET -20V -2.8A

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	2.3 A
Resistance Drain-Source RDS (on) :	112 mOhms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-23	Packaging :	Reel

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 112 mOhms at 4.5 V

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SI2301CDS-T1-GE3

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