SI2301BDS-T1-GE3

MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V

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SI2301BDS-T1-GE3 Picture
SeekIC No. : 00146360 Detail

SI2301BDS-T1-GE3: MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V

floor Price/Ceiling Price

US $ .12~.34 / Piece | Get Latest Price
Part Number:
SI2301BDS-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.34
  • $.2
  • $.16
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.2 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 2.2 A
Package / Case : TO-236-3


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