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SH703

Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSourceVoltage 270 Watts 0.65 /W 200 -65 to 150 16.0A 70V 70V 20VDescriptionS...

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SH703: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSou...

SH703 Data Sheet

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Part Number:
SH703
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltag		 Drain to
Source
Voltage		 Gate to
Source
Voltage
270 Watts
0.65 /W
200
-65 to 150
16.0A
70V
70V
20V





Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.

"Polyfet" TM process VDMOS and LDMOS features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.






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