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Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSourceVoltage 190 Watts 0.85 /W 200 -65 to 150 11.5A 70V 70V 20VDescriptionS...

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SeekIC No. : 004489613 Detail

SH702: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSou...

SH702 Data Sheet

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Part Number:: SH702
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/24

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Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTem...

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Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltag	Drain to Source Voltage	Gate to Source Voltage
190 Watts	0.85 /W	200	-65 to 150	11.5A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.

"Polyfet"^TM process VDMOS and LDMOS features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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SH702

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