Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSourceVoltage 190 Watts 0.85 /W 200 -65 to 150 11.5A 70V 70V 20VDescriptionS...
SH702: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltag Drain toSourceVoltage Gate toSou...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltag |
Drain to Source Voltage |
Gate to Source Voltage |
190 Watts |
0.85 /W |
200 |
-65 to 150 |
11.5A |
70V |
70V |
20V |
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.
"Polyfet"TM process VDMOS and LDMOS features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.