SGW25N120, US $ 3.37-5.53 , Infineon Technologies, SGW25N120 DataSheet download, circuit diagram from SeekIC.com

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SGW25N120: IGBT Transistors FAST IGBT NPT TECH 1200V 25A

SGW25N120 Data Sheet

US $ 3.37~5.53 / Piece | Get Latest Price

Part Number:: SGW25N120
Mfg:: Infineon Technologies
Supply Ability:: 5000

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$5.53
$4.6
$3.57
$3.37

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Upload time: 2024/11/14

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Features: • Short circuit rated 10s @ TC = 100°C, VGE = 15V• High speed switching̶...

Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	+/- 20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3

Specifications

Parameter	Symbol	Value	Value
Collector-emitter voltage	V_CE	1200	V
DC collector current T_C= 25 T_C= 100	I_C	46 25	A
Pulsed collector current, t_plimited by T_jmax	I_Cpuls	84	A
Turn off safe operating area V_CE 1200V, T_j 150	-	84	A
Gate-emitter voltage	V_GE	±20	V
Avalanche energy single pulse I_C= 25A, V_CC=50V, R_GE=25 start T_J=25	E_AS	130	mJ
Short circuit withstand time1) V_GE = 15V, V_CC 600V, T_j 150	t_SC	10	s
Power dissipation T_C = 25	P_tot	313	W
Operating junction and storage temperature	T_j, T_stg	-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

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SGW25N120

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