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SGW20N60HS

IGBT Transistors HIGH SPEED NPT TECH 600V 20A

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SeekIC No. : 00142850 Detail

SGW20N60HS: IGBT Transistors HIGH SPEED NPT TECH 600V 20A

SGW20N60HS Data Sheet

floor Price/Ceiling Price

US $ 1.87~2.84 / Piece | Get Latest Price
Part Number:
SGW20N60HS
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.84
  • $2.53
  • $2.08
  • $1.87
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-247-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Specifications

Parameter Symbol Value Value
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25
TC = 100		 IC 36
20		 A
Pulsed collector current, tp limited by Tjmax ICpuls 80 A
Turn off safe operating area
VCE 600V, Tj 150		 - 80 A
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25
start TJ=25		 EAS 115 mJ
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25
start TJ=25		 VGE ±20
±30		 V
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150		 tSC 10 s
Power dissipation
TC = 25		 Ptot 178 W
Operating junction and storage temperature Tj ,
Tstg		 -55...+150
Time limited operating junction temperature for t < 150h T j(tl) 175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260



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