IGBT Transistors 600V/ 12A
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Features: • High speed switching• Low saturation voltage : V CE(sat) = 2.1 V @ IC = 12...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.1 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 23 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 100 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | D2PAK-3 | Packaging : | Reel |
Technical/Catalog Information | SGW23N60UFDTM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 12A |
Vce(on) (Max) @ Vge, Ic | - |
Power - Max | - |
Mounting Type | Surface Mount |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SGW23N60UFDTM SGW23N60UFDTM |