Features: • High Speed Switching• Low Saturation Voltage : V CE(sat) = 4.7 V @ IC = 5A• High Input ImpedanceApplicationSwitching Power Supply - High Input Voltage Off-line ConverterSpecifications Symbol Description SGS5N150UF Units VCES Collector-Emitter Voltage 1500...
SGS5N150UF: Features: • High Speed Switching• Low Saturation Voltage : V CE(sat) = 4.7 V @ IC = 5A• High Input ImpedanceApplicationSwitching Power Supply - High Input Voltage Off-line Converte...
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Symbol | Description | SGS5N150UF | Units |
VCES | Collector-Emitter Voltage | 1500 | V |
VGES | Gate-Emitter Voltage | ±20 | V |
IC | Collector Current @ TC = 25 | 10 | A |
Collector Current @ TC = 100 | 5 | A | |
I CM(1) | Pulsed Collector Current | 20 | A |
PD | Maximum Power Dissipation @ TC = 25 | 50 | W |
Maximum Power Dissipation @ TC = 100 | 20 | W | |
TJ | Operating Junction Temperature | -55 to +150 | |
Tstg | Storage Temperature Range | -55 to +150 | |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
Fairchild's Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGS5N150UF is designed for the Switching Power Supply applications.